1 tm file number 4911.1 ISL9R860P2 8a, 600v stealth diode the ISL9R860P2 is a stealth diode optimized for low loss performance in high frequency applications. the stealth family exhibits low reverse recovery current (i rrm ) and exceptionally soft recovery under typical operating conditions. this device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. the low i rrm and short t a phase reduce loss in switching transistors. the soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. formerly developmental type ta49409. symbol features soft recovery. . . . . . . . . . . . . . . . . . . . . . . . . . t b / t a > 2.5 fast recovery . . . . . . . . . . . . . . . . . . . . . . . . . . t rr < 25ns operating temperature. . . . . . . . . . . . . . . . . . . . . . .175 o c reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600v avalanche energy rated applications switch mode power supplies pfc boost diode ups free wheeling diode motor drive fwd smps fwd snubber diode packaging jedec to-220ac ordering information part number package brand ISL9R860P2 to-220ac r860p2 note: when ordering, use the entire part number. k a cathode (flange) cathode anode absolute maximum ratings t c = 25 o c, unless otherwise speci?d ISL9R860P2 units peak repetitive reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v rrm 600 v working peak reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v rwm 600 v dc blocking voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v r 600 v average recti?d forward current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i f(av) 8a repetitive peak surge current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i frm (square wave, 20khz) 16 a nonrepetitive peak surge current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i fsm (halfwave 1 phase 60hz) 100 a maximum power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 85 w avalanche energy (1a, 40mh). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .e avl 20 mj operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t stg , t j -55 to 175 o c data sheet november 2000 1-888-intersil or 321-724-7143 | intersil and design is a trademark of intersil corporation. | copyright ?intersil corporation 2000 stealth is a trademark of intersil corporation.
2 electrical speci?ations t c = 25 o c, unless otherwise speci?d symbol test condition min typ max units v f i f = 8a - 2.0 2.4 v i f = 8a, t c = 125 o c - 1.6 2.0 v i r v r = 600v - - 100 a v r = 600v, t c = 125 o c - - 1.0 ma t rr i f = 1a, di f /dt = 100a/ s, v r = 30v - 18 25 ns i f = 8a, di f /dt = 100a/ s, v r = 30v - 21 30 ns t rr i f = 8a, di f /dt = 200a/ s, v r = 390v, t c = 25 o c - 28 - ns i rrm - 3.2 - a q rr -50-nc t rr i f = 8a, di f /dt = 200a/ s, v r = 390v, t c = 125 o c - 77 - ns s - 3.7 - i rrm - 3.4 - a q rr - 150 - nc t rr i f = 8a, di f /dt = 600a/ s, v r = 390v, t c = 125 o c - 53 - ns s - 2.5 - i rrm - 6.5 - a q rr - 195 - nc di m /dt - 500 - a/ s c j v r = 10v, i f = 0a - 30 - pf r jc - - 1.75 o c/w definitions d = duty cycle. v f = instantaneous forward voltage (pw = 300 s, d = 2%). i r = instantaneous reverse current. t rr = reverse recovery time (t a + t b ). s = softness factor (t b / t a ). i rrm = maximum reverse recovery current. q rr = reverse recovery charge. di m /dt = maximum di/dt during t b . c j = junction capacitance. r jc = thermal resistance junction to case. pw = pulse width. typical performance curves figure 1. forward current vs forward voltage figure 2. reverse current vs reverse voltage v f , forward voltage (v) i f , forward current (a) 0 0.5 0.75 1 2.5 0.25 1.5 2 2.25 0 2 4 6 8 10 12 14 16 2.75 25 o c 175 o c 150 o c 100 o c 125 o c 1.75 1.25 v r , reverse voltage (v) i r , reverse current ( a) 100 10 1 100 200 300 500 600 400 0.1 25 o c 175 o c 150 o c 125 o c 100 o c ISL9R860P2
3 figure 3. t a and t b curves vs forward current figure 4. t a and t b curves vs di f /dt figure 5. maximum reverse recovery current vs forward current figure 6. maximum reverse recovery current vs di f /dt figure 7. reverse recovery softness factor vs di f /dt figure 8. reverse recovery charge vs di f /dt typical performance curves (continued) i f , forward current (a) 0 0 10 20 30 40 50 60 10 16 t, recovery times (ns) 70 80 2468 1214 v r = 390v, t j = 125 o c t b at di f /dt = 200a/ s, 500a/ s, 800a/ s t a at di f /dt = 200a/ s, 500a/ s, 800a/ s di f /dt, current rate of change (a/ s) 100 0 10 20 30 40 50 60 700 1000 t, recovery times (ns) 200 300 400 500 600 800 900 70 80 90 v r = 390v, t j = 125 o c t b at i f = 16a, 8a, 4a t a at i f = 16a, 8a, 4a i f , forward current (a) 0 2 3 4 5 6 7 8 16 i rrm , max reverse recovery current (a) di f /dt = 800a/ s di f /dt = 500a/ s di f /dt = 200a/ s v r = 390v, t j = 125 o c 9 10 11 2468101214 di f /dt, current rate of change (a/ s) 100 0 2 4 6 8 10 700 1000 i rrm , max reverse recovery current (a) v r = 390v, t j = 125 o c i f = 16a i f = 8a i f = 4a 12 14 200 300 400 500 600 800 900 di f /dt, current rate of change (a/ s) 100 1 2 3 4 5 6 700 1000 v r = 390v, t j = 125 o c i f = 16a i f = 8a i f = 4a s, reverse recovery softness factor 200 300 400 500 600 800 900 di f /dt, current rate of change (a/ s) 50 100 150 200 250 300 350 v r = 390v, t j = 125 o c i f = 16a i f = 8a i f = 4a q rr , reverse recovery charge (nc) 100 700 1000 200 300 400 500 600 800 900 ISL9R860P2
4 figure 9. junction capacitance vs reverse voltage figure 10. normalized maximum transient thermal impedance typical performance curves (continued) v r , reverse voltage (v) c j , junction capacitance (pf) 0 200 400 600 800 1000 1200 0.1 100 10 1 0.05 t, rectangular pulse duration (s) 10 -5 10 -2 10 -1 z ja , normalized thermal impedance 0.01 10 -4 10 -3 single pulse 10 0 0.1 10 1 r ja = 62 o c/w duty cycle - descending order 0.5 0.2 0.1 0.05 0.01 0.02 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a p dm t 1 t 2 1.0 test circuits and waveforms figure 11. t rr test circuit figure 12. t rr waveforms and definitions r g l v dd mos irf840 current sense dut v ge t 1 t 2 v ge amplitude and t 1 and t 2 control i f r g control di f /dt + - dt di f i f t rr t a t b 0 i rm 0.25 i rm ISL9R860P2
5 figure 13. avalanche energy test circuit figure 14. avalanche current and voltage waveforms test circuits and waveforms (continued) dut current sense + lr v dd r < 0.1 ? e avl = 1/2li 2 [v r(avl) /(v r(avl) - v dd )] q 1 = igbt (bv ces > dut v r(avl) ) - v dd q 1 i = 1a l = 40mh v dd = 50v iv t 0 t 1 t 2 i l v avl t i l ISL9R860P2
6 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site www.intersil.com sales of?e headquarters north america intersil corporation p. o. box 883, mail stop 53-204 melbourne, fl 32902 tel: (321) 724-7000 fax: (321) 724-7240 europe intersil sa mercure center 100, rue de la fusee 1130 brussels, belgium tel: (32) 2.724.2111 fax: (32) 2.724.22.05 asia intersil ltd. 8f-2, 96, sec. 1, chien-kuo north, taipei, taiwan 104 republic of china tel: 886-2-2515-8508 fax: 886-2-2515-8369 ISL9R860P2 to-220ac 2 lead jedec to-220ac plastic package (for rectifiers only) e p q d h 1 e 1 l l 1 60 o b 1 b 1 2 e 1 a c j 1 45 o d 1 a 1 term. 3 symbol inches millimeters notes min max min max a 0.170 0.180 4.32 4.57 - a 1 0.048 0.052 1.22 1.32 - b 0.030 0.034 0.77 0.86 3, 4 b 1 0.045 0.055 1.15 1.39 2, 3 c 0.014 0.019 0.36 0.48 2, 3, 4 d 0.590 0.610 14.99 15.49 - d 1 - 0.160 - 4.06 - e 0.395 0.410 10.04 10.41 - e 1 - 0.030 - 0.76 - e 1 0.200 bsc 5.08 bsc 5 h 1 0.235 0.255 5.97 6.47 - j 1 0.100 0.110 2.54 2.79 6 l 0.530 0.550 13.47 13.97 - l 1 0.130 0.150 3.31 3.81 2 p 0.149 0.153 3.79 3.88 - q 0.102 0.112 2.60 2.84 - notes: 1. these dimensions are within allowable dimensions of rev. j of jedec to-220ac outline dated 3-24-87. 2. lead dimension and finish uncontrolled in l 1 . 3. lead dimension (without solder). 4. add typically 0.002 inches (0.05mm) for solder coating. 5. position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension d. 6. position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension d. 7. controlling dimension: inch. 8. revision 3 dated 7-97.
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